80N06-251 Specs and Replacement
Type Designator: 80N06-251
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 185 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO-251
80N06-251 substitution
- MOSFET ⓘ Cross-Reference Search
80N06-251 datasheet
80n06-251.pdf
80N06-251 GOFORD Description The 80N06-251 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS R DS(ON) ID @ 10V (typ) 80 A 60V 11.7 m Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and cur... See More ⇒
stw80n06-10.pdf
STW80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STW80N06-10 60 V ... See More ⇒
stp80n06-10.pdf
STP80N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP80N06-10 60 V ... See More ⇒
am80n06-05d.pdf
Analog Power AM80N06-05D N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 5.9 @ VGS = 10V 76 Low thermal impedance 60 6.6 @ VGS = 5.5V 72 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM... See More ⇒
Detailed specifications: BRFL8N60, IRFB3710, 2312, 06N06L, 18N10W, 2300F, 3400H, 3415A, 5N65, 8680A, G01N20R, G06N10, G08N03D2, G08N06S, G1006LE, G1007, G10N10A
Keywords - 80N06-251 MOSFET specs
80N06-251 cross reference
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History: STD150NH02LT4 | BSC080N03LSG
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