80N06-251 - параметры транзистора MOSFET, его аналоги, datasheet

80N06-251 Datasheet (PDF)

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80N06-251GOFORDDescription The 80N06-251 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS R DS(ON) ID @ 10V (typ) 80 A60V 11.7 m Schematic diagram High density cell design for ultra low Rdson Fully characterized avalanche voltage and cur

8.1. Size:61K st
stw80n06-10.pdf pdf_icon

STW80N06-10N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATA TYPE VDSS RDS(on) IDSTW80N06-10 60 V

8.2. Size:77K st
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STP80N06-10N - CHANNEL ENHANCEMENT MODE"ULTRA HIGH DENSITY" POWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP80N06-10 60 V

8.3. Size:301K analog power
am80n06-05d.pdf pdf_icon

Analog Power AM80N06-05DN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)5.9 @ VGS = 10V76 Low thermal impedance 606.6 @ VGS = 5.5V72 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

Другие MOSFET... BRFL8N60 , IRFB3710 , 2312 , 06N06L , 18N10W , 2300F , 3400H , 3415A , 4435 , 8680A , G01N20R , G06N10 , G08N03D2 , G08N06S , G1006LE , G1007 , G10N10A .