G30N04D3 Todos los transistores

 ..1. Size:656K  goford
 g30n04d3.pdf

 9.1. Size:586K  1
 mcg30n03-tp.pdf

MCG30N03 Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings

 9.2. Size:709K  1
 g30n03d3.pdf

GOFORD G30N03D3 N-Channel Trench MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)

 9.3. Size:1587K  mcc
 mcg30n03a.pdf

MCG30N03A Features High Density Cell Design For Low RDS(ON) Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation Epoxy Meets UL 94 V-0 Flammability Rating N-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ord

 9.4. Size:586K  mcc
 mcg30n03.pdf

MCG30N03 Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1) MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings

 9.5. Size:709K  goford
 g30n03d3.pdf

GOFORD G30N03D3 N-Channel Trench MOSFET Description The G30N03D3 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)

 9.6. Size:988K  goford
 g30n03a.pdf

GOFORD G30N03A N-Channel Enhancement Mode Power MOSFET Description The G30N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

 9.7. Size:1132K  cn yangzhou yangjie elec
 yjg30n06a.pdf

RoHS COMPLIANT YJG30N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 30A D R ( at V = 10V) 20mohm DS(ON) GS R ( at V = 4.5V) 23mohm DS(ON) GS General Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications DC-DC Converters

 9.8. Size:2198K  cn minos
 mpg30n06p.pdf