Справочник MOSFET. G30N04D3

 

G30N04D3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: G30N04D3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 19.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 17.2 ns
   Cossⓘ - Выходная емкость: 209 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
   Тип корпуса: DFN3X3-8L

 Аналог (замена) для G30N04D3

 

 

G30N04D3 Datasheet (PDF)

 ..1. Size:656K  goford
 g30n04d3.pdf

G30N04D3 G30N04D3

GOFORDG30N04D3N-Channel Enhancement Mode Power MOSFETDescriptionThe G30N04D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a widevariety of applications.General Features VDS 40V ID (at VGS = 10V) 30ASchematic Diagram RDS(ON) (at VGS= 10V)

 9.1. Size:586K  1
 mcg30n03-tp.pdf

G30N04D3 G30N04D3

MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings

 9.2. Size:709K  1
 g30n03d3.pdf

G30N04D3 G30N04D3

GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)

 9.3. Size:1587K  mcc
 mcg30n03a.pdf

G30N04D3 G30N04D3

MCG30N03AFeatures High Density Cell Design For Low RDS(ON) Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ord

 9.4. Size:586K  mcc
 mcg30n03.pdf

G30N04D3 G30N04D3

MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings

 9.5. Size:709K  goford
 g30n03d3.pdf

G30N04D3 G30N04D3

GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)

 9.6. Size:988K  goford
 g30n03a.pdf

G30N04D3 G30N04D3

GOFORDG30N03AN-Channel Enhancement Mode Power MOSFET Description The G30N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

 9.7. Size:1132K  cn yangzhou yangjie elec
 yjg30n06a.pdf

G30N04D3 G30N04D3

RoHS COMPLIANT YJG30N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 30A D R ( at V = 10V) 20mohm DS(ON) GS R ( at V = 4.5V) 23mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications DC-DC Converters

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