G30N04D3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: G30N04D3
Маркировка: G30N04
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 19.8 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 30 nC
Время нарастания (tr): 17.2 ns
Выходная емкость (Cd): 209 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0095 Ohm
Тип корпуса: DFN3X3-8L
G30N04D3 Datasheet (PDF)
g30n04d3.pdf
GOFORDG30N04D3N-Channel Enhancement Mode Power MOSFETDescriptionThe G30N04D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a widevariety of applications.General Features VDS 40V ID (at VGS = 10V) 30ASchematic Diagram RDS(ON) (at VGS= 10V)
mcg30n03-tp.pdf
MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings
g30n03d3.pdf
GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)
mcg30n03a.pdf
MCG30N03AFeatures High Density Cell Design For Low RDS(ON) Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ord
mcg30n03.pdf
MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings
g30n03d3.pdf
GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)
g30n03a.pdf
GOFORDG30N03AN-Channel Enhancement Mode Power MOSFET Description The G30N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)
yjg30n06a.pdf
RoHS COMPLIANT YJG30N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 30A D R ( at V = 10V) 20mohm DS(ON) GS R ( at V = 4.5V) 23mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications DC-DC Converters
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