G30N04D3 MOSFET. Datasheet pdf. Equivalent
Type Designator: G30N04D3
Marking Code: G30N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 19.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 30 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 209 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: DFN3X3-8L
G30N04D3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G30N04D3 Datasheet (PDF)
g30n04d3.pdf
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GOFORDG30N04D3N-Channel Enhancement Mode Power MOSFETDescriptionThe G30N04D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a widevariety of applications.General Features VDS 40V ID (at VGS = 10V) 30ASchematic Diagram RDS(ON) (at VGS= 10V)
mcg30n03-tp.pdf
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MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings
g30n03d3.pdf
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GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)
mcg30n03a.pdf
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MCG30N03AFeatures High Density Cell Design For Low RDS(ON) Trench Power LV MOSFET Technology Excellent Package for Heat Dissipation Epoxy Meets UL 94 V-0 Flammability RatingN-CHANNEL Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ord
mcg30n03.pdf
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MCG30N03Features High Density Cell Desihn for Ultra Low RDS(on) Fully Characterized Avalanche Voltage and Current Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free. Green Device (Note 1)MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Maximum Ratings
g30n03d3.pdf
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GOFORDG30N03D3N-Channel Trench MOSFETDescriptionThe G30N03D3 uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 30V ID (at VGS = 10V) 30A RDS(ON) (at VGS = 10V)
g30n03a.pdf
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GOFORDG30N03AN-Channel Enhancement Mode Power MOSFET Description The G30N03A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)
yjg30n06a.pdf
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RoHS COMPLIANT YJG30N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 30A D R ( at V = 10V) 20mohm DS(ON) GS R ( at V = 4.5V) 23mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications DC-DC Converters
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![G30N04D3](https://alltransistors.com/images/us.png)
![G30N04D3](https://alltransistors.com/images/es.png)
![G30N04D3](https://alltransistors.com/images/ru.png)
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