GT1003B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT1003B 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 17 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 28.9 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Encapsulados: SOT-23
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GT1003B datasheet
..1. Size:641K goford
gt1003b.pdf 
GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent R , low gate charge. This DS(ON) device is suitable for use in high frequency Synchronous- recification application. General Features Schematic Diagram @ (Typ) 10V GT1003B 100V 7 A 115m 10N10 High density cell design for ultra low Rdson Lead free
8.1. Size:621K goford
gt1003a.pdf
GOFORD GT1003A Description The GT1003A uses advanced trench technology and design to provide excellent R , low gate charge. This DS(ON) device is suitable for use in high frequency Synchronous- recification application. General Features Schematic Diagram @ (Typ) 10V GT1003A 100V 7 A 115m 10N10 High density cell design for ultra low Rdson RoHS Co
9.1. Size:181K vishay
vs-gt100tp60n.pdf
VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (
9.2. Size:184K vishay
vs-gt100tp120n.pdf
VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using
9.3. Size:172K vishay
vs-gt100la120ux.pdf
VS-GT100LA120UX www.vishay.com Vishay Semiconductors Low Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved
9.4. Size:172K vishay
vs-gt100na120ux.pdf
VS-GT100NA120UX www.vishay.com Vishay Semiconductors High Side Chopper IGBT SOT-227 (Trench IGBT), 100 A FEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated package SOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved
9.5. Size:185K apt
aptgt100sk120d1.pdf
APTGT100SK120D1 VCES = 1200V Buck chopper IC = 100A @ Tc = 80 C Trench IGBT Power Module Application AC and DC motor control 3 Q1 Switched Mode Power Supplies 4 Features Trench + Field Stop IGBT Technology 5 - Low voltage drop 1 - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage
9.6. Size:232K apt
aptgt100x120te3.pdf
APTGT100X120TE3 VCES = 1200V 3 Phase bridge IC = 100A @ Tc = 80 C Trench IGBT Power Module Application AC Motor control Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA ra
9.7. Size:185K apt
aptgt100da170d1.pdf
APTGT100DA170D1 VCES = 1700V Boost chopper IC = 100A @ Tc = 80 C Trench IGBT Power Module Application 3 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2 - Low voltage drop 6 - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 7 2
9.8. Size:225K apt
aptgt100x120e3.pdf
APTGT100X120E3 VCES = 1200V 3 Phase bridge IC = 100A @ Tc = 80 C Trench IGBT Power Module Application AC Motor control Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rat
9.9. Size:185K apt
aptgt100da120d1.pdf
APTGT100DA120D1 VCES = 1200V Boost chopper IC = 100A @ Tc = 80 C Trench IGBT Power Module Application AC and DC motor control 3 Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2 - Low voltage drop 6 - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 7 -
9.10. Size:185K apt
aptgt100sk170d1.pdf
APTGT100SK170D1 VCES = 1700V Buck chopper IC = 100A @ Tc = 80 C Trench IGBT Power Module Application 3 AC and DC motor control Q1 Switched Mode Power Supplies 4 Features Trench + Field Stop IGBT Technology 5 1 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF 2 - Low leakage c
9.11. Size:185K apt
aptgt100a120d1.pdf
APTGT100A120D1 VCES = 1200V Phase Leg IC = 100A @ Tc = 80 C Trench IGBT Power Module Application Welding converters 3 Q1 Switched Mode Power Supplies 4 Uninterruptible Power Supplies Motor control 5 Features 1 Q2 Trench + Field Stop IGBT Technology 6 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz 7 - Soft r
9.12. Size:185K apt
aptgt100a170d1.pdf
APTGT100A170D1 VCES = 1700V Phase leg IC = 100A @ Tc = 80 C Trench IGBT Power Module Application Welding converters 3 Q1 Switched Mode Power Supplies Uninterruptible Power Supplies 4 Motor control 5 Features 1 Q2 Trench + Field Stop IGBT Technology - Low voltage drop 6 - Low tail current - Switching frequency up to 20 kHz 7 - Soft r
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mmgt100wd120xb6c.pdf
MMGT100WD120XB6C 1200V 100A PIM Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper
9.14. Size:371K macmic
mmgt100w120x6c.pdf
MMGT100W120X6C 1200V 100A Six-Pack Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated cop
9.15. Size:260K macmic
mmgt100j120uz6c.pdf
MMGT100J120UZ6C 1200V 100A IGBT Module November 2018 Version 01 RoHS Compliant PRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Popular SOT-227 Package TJmax=175 APPLICATIONS AC motor control Motion/servo control Inver
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sgt100n45t sgp100n45t.pdf
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N45T Rev. 1.0 Dec. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGT100N45T/SGP100N45T 100V N-Channel MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is VDS 100V ID (at Vgs=10V) 25A uniquely optimized to
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