GT1003B Datasheet and Replacement

GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent R , low gate charge. This DS(ON)device is suitable for use in high frequency Synchronous- recification application. General Features Schematic Diagram @ (Typ) 10V GT1003B100V 7 A 115m 10N10 High density cell design for ultra low Rdson Lead free

GOFORD GT1003A Description The GT1003A uses advanced trench technology and design to provide excellent R , low gate charge. This DS(ON)device is suitable for use in high frequency Synchronous- recification application. General Features Schematic Diagram @ (Typ) 10V GT1003A 100V 7 A 115m 10N10 High density cell design for ultra low Rdson RoHS Co

VS-GT100TP60Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 600 V, 100 AFEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (

VS-GT100TP120Nwww.vishay.comVishay SemiconductorsHalf Bridge IGBT Power Module, 1200 V, 100 AFEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using

VS-GT100LA120UXwww.vishay.comVishay SemiconductorsLow Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

VS-GT100NA120UXwww.vishay.comVishay SemiconductorsHigh Side Chopper IGBT SOT-227(Trench IGBT), 100 AFEATURES Trench IGBT technology Very low VCE(on) Square RBSOA HEXFRED clamping diode 10 s short circuit capability Fully isolated packageSOT-227 Very low internal inductance ( 5 nH typical) Industry standard outline UL approved

APTGT100SK120D1 VCES = 1200V Buck chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC and DC motor control 3Q1 Switched Mode Power Supplies 4 Features Trench + Field Stop IGBT Technology 5- Low voltage drop 1- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage

APTGT100X120TE3 VCES = 1200V 3 Phase bridge IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC Motor control Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA ra

APTGT100DA170D1 VCES = 1700V Boost chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application 3 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2- Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 72

APTGT100X120E3 VCES = 1200V 3 Phase bridge IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC Motor control Features Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rat

APTGT100DA120D1 VCES = 1200V Boost chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application AC and DC motor control 3 Switched Mode Power Supplies Power Factor Correction Features 1 Trench + Field Stop IGBT Technology Q2- Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 7-

APTGT100SK170D1 VCES = 1700V Buck chopper IC = 100A @ Tc = 80C Trench IGBT Power Module Application 3 AC and DC motor control Q1 Switched Mode Power Supplies 4Features Trench + Field Stop IGBT Technology 51 - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF 2 - Low leakage c

APTGT100A120D1 VCES = 1200V Phase Leg IC = 100A @ Tc = 80C Trench IGBT Power Module Application Welding converters 3Q1 Switched Mode Power Supplies 4 Uninterruptible Power Supplies Motor control 5Features 1Q2 Trench + Field Stop IGBT Technology 6- Low voltage drop - Low tail current - Switching frequency up to 20 kHz 7- Soft r

APTGT100A170D1 VCES = 1700V Phase leg IC = 100A @ Tc = 80C Trench IGBT Power Module Application Welding converters 3Q1 Switched Mode Power Supplies Uninterruptible Power Supplies 4 Motor control 5Features 1Q2 Trench + Field Stop IGBT Technology - Low voltage drop 6- Low tail current - Switching frequency up to 20 kHz 7- Soft r

MMGT100WD120XB6C1200V 100A PIM ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper

MMGT100W120X6C1200V 100A Six-Pack ModuleSeptember 2015 Version 0 RoHS CompliantPRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated cop

MMGT100J120UZ6C1200V 100A IGBT ModuleNovember 2018 Version 01 RoHS CompliantPRODUCT FEATURES IGBT CHIP(Trench+Field Stop technology) Low switching losses Low saturation voltage and positive temperature coefficient Fast switching and short tail current Popular SOT-227 Package TJmax=175APPLICATIONS AC motor control Motion/servo control Inver

SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N45T Rev. 1.0 Dec. 2016 www.supersemi.com.cn Jun, 2015 SG-FET SGT100N45T/SGP100N45T 100V N-Channel MOSFET Description Features The SG-MOSFET uses trench MOSFET technology that is VDS 100V ID (at Vgs=10V) 25A uniquely optimized to