GT1003B PDF and Equivalents Search

 

GT1003B Specs and Replacement

Type Designator: GT1003B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 17 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 28.9 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: SOT-23

GT1003B substitution

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GT1003B datasheet

 ..1. Size:641K  goford
gt1003b.pdf pdf_icon

GT1003B

GOFORD GT1003B Description The GT1003B uses advanced trench technology and design to provide excellent R , low gate charge. This DS(ON) device is suitable for use in high frequency Synchronous- recification application. General Features Schematic Diagram @ (Typ) 10V GT1003B 100V 7 A 115m 10N10 High density cell design for ultra low Rdson Lead free ... See More ⇒

 8.1. Size:621K  goford
gt1003a.pdf pdf_icon

GT1003B

GOFORD GT1003A Description The GT1003A uses advanced trench technology and design to provide excellent R , low gate charge. This DS(ON) device is suitable for use in high frequency Synchronous- recification application. General Features Schematic Diagram @ (Typ) 10V GT1003A 100V 7 A 115m 10N10 High density cell design for ultra low Rdson RoHS Co... See More ⇒

 9.1. Size:181K  vishay
vs-gt100tp60n.pdf pdf_icon

GT1003B

VS-GT100TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 100 A FEATURES Low VCE(on) trench IGBT technology 5 s short circuit capability VCE(on) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using DCB (... See More ⇒

 9.2. Size:184K  vishay
vs-gt100tp120n.pdf pdf_icon

GT1003B

VS-GT100TP120N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 1200 V, 100 A FEATURES Low VCE(sat) trench IGBT technology 10 s short circuit capability VCE(sat) with positive temperature coefficient Maximum junction temperature 175 C Low inductance case Fast and soft reverse recovery antiparallel FWD Isolated copper baseplate using ... See More ⇒

Detailed specifications: GC11N70F , GT045N10M , GT045N10T , GT045N10D5 , GT060N10T , GT060N10M , GT070N15T , GT1003A , AO4468 , GT10N10 , GT125N10T , GT125N10M , GT125N10F , GT12N06S , GT130N03D5 , GT15N10S , GT45N06 .

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