GT130N03D5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT130N03D5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 36 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 115 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3 nS
Cossⓘ - Capacitancia de salida: 360 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Paquete / Cubierta: DFN5X6-8L
Búsqueda de reemplazo de GT130N03D5 MOSFET
GT130N03D5 Datasheet (PDF)
gt130n03d5.pdf
GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)
gt130n03d5.pdf
GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)
gt13003y.pdf
GT13003YHigh Voltage And High Speed Switching TransistorsTO-252 0.094(2.38)0.264(6.70)Features0.087(2.20)0.256(6.50)0.022(0.56)0.215(5.46)0.018(0.46)0.202(5.13)2=1.65A=800V 0.055(1.40)0.031(0.80) 0.244(6.20)0.236(6.00)0.051(1.30)0.409(10.40)0.004(0.10)0.043(1.10)0.386( 9.80)MAX.1 2 30.114(2.90)0.067(1.70)REF.0.055(1.40)0.032(0.81)0.022(0
Otros transistores... GT070N15T , GT1003A , GT1003B , GT10N10 , GT125N10T , GT125N10M , GT125N10F , GT12N06S , 20N60 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T , GT68N12M , XM2N200 .
History: DMN65D8LW | PT8822
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