GT130N03D5 Datasheet and Replacement

GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)

GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)

GT13003YHigh Voltage And High Speed Switching TransistorsTO-252 0.094(2.38)0.264(6.70)Features0.087(2.20)0.256(6.50)0.022(0.56)0.215(5.46)0.018(0.46)0.202(5.13)2=1.65A=800V 0.055(1.40)0.031(0.80) 0.244(6.20)0.236(6.00)0.051(1.30)0.409(10.40)0.004(0.10)0.043(1.10)0.386( 9.80)MAX.1 2 30.114(2.90)0.067(1.70)REF.0.055(1.40)0.032(0.81)0.022(0