GT130N03D5 MOSFET PDF: N-Ch, 30V, 115A. Datasheet. Full specification with pinout and replacement list

GT130N03D5 Specs and Replacement

   Type Designator: GT130N03D5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: DFN5X6-8L

GT130N03D5 substitution

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GT130N03D5 datasheet

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GOFORD GT130N03D5 N-Channel Enhancement Mode PowerMOSFET Description The GT130N03D5 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V) ... See More ⇒

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9.1. Size:806K cn shunye
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GT13003Y High Voltage And High Speed Switching Transistors TO-252 0.094(2.38) 0.264(6.70) Features 0.087(2.20) 0.256(6.50) 0.022(0.56) 0.215(5.46) 0.018(0.46) 0.202(5.13) 2 =1.65A =800V 0.055(1.40) 0.031(0.80) 0.244(6.20) 0.236(6.00) 0.051(1.30) 0.409(10.40) 0.004(0.10) 0.043(1.10) 0.386( 9.80) MAX. 1 2 3 0.114(2.90) 0.067(1.70) REF. 0.055(1.40) 0.032(0.81) 0.022(0... See More ⇒

Detailed specifications: GT070N15T , GT1003A , GT1003B , GT10N10 , GT125N10T , GT125N10M , GT125N10F , GT12N06S , 20N60 , GT15N10S , GT45N06 , GT52N10D5 , GT52N10T , GT55N06 , GT68N12T , GT68N12M , XM2N200 .