GT130N03D5 Datasheet. Specs and Replacement

Type Designator: GT130N03D5  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 115 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: DFN5X6-8L

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GT130N03D5 datasheet

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GT130N03D5

GOFORD GT130N03D5 N-Channel Enhancement Mode PowerMOSFET Description The GT130N03D5 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V) ... See More ⇒

 ..2. Size:708K  goford
gt130n03d5.pdf pdf_icon

GT130N03D5

GOFORD GT130N03D5 N-Channel Enhancement Mode PowerMOSFET Description The GT130N03D5 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V) ... See More ⇒

 9.1. Size:806K  cn shunye
gt13003y.pdf pdf_icon

GT130N03D5

GT13003Y High Voltage And High Speed Switching Transistors TO-252 0.094(2.38) 0.264(6.70) Features 0.087(2.20) 0.256(6.50) 0.022(0.56) 0.215(5.46) 0.018(0.46) 0.202(5.13) 2 =1.65A =800V 0.055(1.40) 0.031(0.80) 0.244(6.20) 0.236(6.00) 0.051(1.30) 0.409(10.40) 0.004(0.10) 0.043(1.10) 0.386( 9.80) MAX. 1 2 3 0.114(2.90) 0.067(1.70) REF. 0.055(1.40) 0.032(0.81) 0.022(0... See More ⇒

Detailed specifications: GT070N15T, GT1003A, GT1003B, GT10N10, GT125N10T, GT125N10M, GT125N10F, GT12N06S, 20N60, GT15N10S, GT45N06, GT52N10D5, GT52N10T, GT55N06, GT68N12T, GT68N12M, XM2N200

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.