GT130N03D5 Datasheet. Specs and Replacement
Type Designator: GT130N03D5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 360 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: DFN5X6-8L
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GT130N03D5 substitution
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GT130N03D5 datasheet
gt130n03d5.pdf
GOFORD GT130N03D5 N-Channel Enhancement Mode PowerMOSFET Description The GT130N03D5 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V) ... See More ⇒
gt130n03d5.pdf
GOFORD GT130N03D5 N-Channel Enhancement Mode PowerMOSFET Description The GT130N03D5 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V) ... See More ⇒
gt13003y.pdf
GT13003Y High Voltage And High Speed Switching Transistors TO-252 0.094(2.38) 0.264(6.70) Features 0.087(2.20) 0.256(6.50) 0.022(0.56) 0.215(5.46) 0.018(0.46) 0.202(5.13) 2 =1.65A =800V 0.055(1.40) 0.031(0.80) 0.244(6.20) 0.236(6.00) 0.051(1.30) 0.409(10.40) 0.004(0.10) 0.043(1.10) 0.386( 9.80) MAX. 1 2 3 0.114(2.90) 0.067(1.70) REF. 0.055(1.40) 0.032(0.81) 0.022(0... See More ⇒
Detailed specifications: GT070N15T, GT1003A, GT1003B, GT10N10, GT125N10T, GT125N10M, GT125N10F, GT12N06S, 20N60, GT15N10S, GT45N06, GT52N10D5, GT52N10T, GT55N06, GT68N12T, GT68N12M, XM2N200
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