GT130N03D5
MOSFET. Datasheet pdf. Equivalent
Type Designator: GT130N03D5
Marking Code: GT130N03
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 36
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 115
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 360
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0035
Ohm
Package:
DFN5X6-8L
GT130N03D5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
GT130N03D5
Datasheet (PDF)
..1. Size:708K 1
gt130n03d5.pdf 
GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)
..2. Size:708K goford
gt130n03d5.pdf
GOFORDGT130N03D5N-Channel Enhancement Mode PowerMOSFETDescriptionThe GT130N03D5 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON) in a wide variety of applications.General Features VDS 30V Schematic Diagram ID (at VGS = 10V) 115A RDS(ON) (at VGS = 10V)
9.1. Size:806K cn shunye
gt13003y.pdf
GT13003YHigh Voltage And High Speed Switching TransistorsTO-252 0.094(2.38)0.264(6.70)Features0.087(2.20)0.256(6.50)0.022(0.56)0.215(5.46)0.018(0.46)0.202(5.13)2=1.65A=800V 0.055(1.40)0.031(0.80) 0.244(6.20)0.236(6.00)0.051(1.30)0.409(10.40)0.004(0.10)0.043(1.10)0.386( 9.80)MAX.1 2 30.114(2.90)0.067(1.70)REF.0.055(1.40)0.032(0.81)0.022(0
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