GT52N10D5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: GT52N10D5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 79 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 71 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 62 nS
Cossⓘ - Capacitancia de salida: 457 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de GT52N10D5 MOSFET
GT52N10D5 Datasheet (PDF)
gt52n10d5.pdf

GOFORD GT52N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V)
gt52n10d5.pdf

GOFORD GT52N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V)
gt52n10t.pdf

GOFORDGT52N10TN-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10T uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)
Otros transistores... GT10N10 , GT125N10T , GT125N10M , GT125N10F , GT12N06S , GT130N03D5 , GT15N10S , GT45N06 , 50N06 , GT52N10T , GT55N06 , GT68N12T , GT68N12M , XM2N200 , DMP3007SPS , DMP3013SFV , DMP3017SFGQ .
History: BLS65R560-U | HCP12NK65V
History: BLS65R560-U | HCP12NK65V



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