All MOSFET. GT52N10D5 Datasheet

 

GT52N10D5 Datasheet and Replacement


   Type Designator: GT52N10D5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 71 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 457 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DFN5X6
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GT52N10D5 Datasheet (PDF)

 ..1. Size:723K  1
 gt52n10d5.pdf pdf_icon

GT52N10D5

GOFORD GT52N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V)

 ..2. Size:723K  goford
 gt52n10d5.pdf pdf_icon

GT52N10D5

GOFORD GT52N10D5N-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic diagram VDS 100V ID (at VGS = 10V) 71A RDS(ON) (at VGS = 10V)

 7.1. Size:679K  goford
 gt52n10t.pdf pdf_icon

GT52N10D5

GOFORDGT52N10TN-Channel Enhancement Mode Power MOSFETDescriptionThe GT52N10T uses advanced trench technology to provideexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 80A RDS(ON) (at VGS = 10V)

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History: IPP015N04NG | HLML6401 | STI12N65M5 | HGA098N10A | NP110N03PUG | BUZ908DP | AP85T03GH-HF

Keywords - GT52N10D5 MOSFET datasheet

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