DMT10H010LK3 Todos los transistores

 ..1. Size:482K  diodes
 dmt10h010lk3.pdf

DMT10H010LK3 Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25 C and Robust End Application Low RDS(ON) Minimizes Power Losses 8.8m @ VGS = 10V 68.8A Low Qg Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 4.1. Size:546K  diodes
 dmt10h010lct.pdf

Green DMT10H010LCT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R Package DSS DS(ON) High BV Rating for Power Application DSS T = +25 C C Low Input/Output Leakage 100V 9.5m @V = 10V TO220AB 98A GS 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Ap

 4.2. Size:367K  diodes
 dmt10h010lss.pdf

DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX 100% Unclamped Inductive Switch (UIS) Test in Production BVDSS RDS(ON) Max TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 100V 29.5A 9.5m @ VGS = 10V Low Input Capacitance Fast Switching Speed Totally Lead-Free &

 4.3. Size:261K  inchange semiconductor
 dmt10h010lct.pdf

isc N-Channel MOSFET Transistor DMT10H010LCT FEATURES Drain Current I = 98A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general