All MOSFET. DMT10H010LK3 Datasheet

 

DMT10H010LK3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMT10H010LK3
   Marking Code: T110LK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8 V
   |Id|ⓘ - Maximum Drain Current: 68.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 53.7 nC
   trⓘ - Rise Time: 14.1 nS
   Cossⓘ - Output Capacitance: 792 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO252

 DMT10H010LK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMT10H010LK3 Datasheet (PDF)

 ..1. Size:482K  diodes
 dmt10h010lk3.pdf

DMT10H010LK3 DMT10H010LK3

DMT10H010LK3 Green100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max 100% Unclamped Inductive Switching Ensures More Reliable BVDSS RDS(ON) Max TC = +25C and Robust End Application Low RDS(ON) Minimizes Power Losses 8.8m @ VGS = 10V 68.8A Low Qg Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

 4.1. Size:546K  diodes
 dmt10h010lct.pdf

DMT10H010LK3 DMT10H010LK3

GreenDMT10H010LCT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BV R Package DSS DS(ON) High BV Rating for Power Application DSST = +25C C Low Input/Output Leakage 100V 9.5m @V = 10V TO220AB 98A GS 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Ap

 4.2. Size:367K  diodes
 dmt10h010lss.pdf

DMT10H010LK3 DMT10H010LK3

DMT10H010LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID MAX 100% Unclamped Inductive Switch (UIS) Test in Production BVDSS RDS(ON) Max TC = +25C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 100V 29.5A 9.5m @ VGS = 10V Low Input Capacitance Fast Switching Speed Totally Lead-Free &

 4.3. Size:261K  inchange semiconductor
 dmt10h010lct.pdf

DMT10H010LK3 DMT10H010LK3

isc N-Channel MOSFET Transistor DMT10H010LCTFEATURESDrain Current I = 98A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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