DMTH6016LSD Todos los transistores

 

DMTH6016LSD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMTH6016LSD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.6 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 282 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm
   Paquete / Cubierta: SO8
 

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DMTH6016LSD Datasheet (PDF)

 ..1. Size:390K  diodes
dmth6016lsd.pdf pdf_icon

DMTH6016LSD

DMTH6016LSD 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175 Ideal for High Ambient Temperature C ID max Environments BVDSS RDS(ON) max TA = +25C 100% Unclamped Inductive Switching ensures more reliable and 19.5m @ VGS = 10V 7.6A robust end application 60V Low On-Resistance 28m @ VGS

 7.1. Size:536K  1
dmth6010lpsq-13.pdf pdf_icon

DMTH6016LSD

DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m

 7.2. Size:536K  diodes
dmth6010lpsq.pdf pdf_icon

DMTH6016LSD

DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m

 7.3. Size:539K  diodes
dmth6010lk3.pdf pdf_icon

DMTH6016LSD

Green DMTH6010LK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID Max Excellent Qgd x RDS (ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC/DC Converters 8m @ VGS = 10V 70A 60V Small form factor thermally efficient package enables hi

Otros transistores... DMTH6002LPS , DMTH6004SK3 , DMTH6004SK3Q , DMTH6005LK3Q , DMTH6009LK3 , DMTH6009LK3Q , DMTH6010LK3 , DMTH6010LPSQ , IRF2807 , DMTH8003SPS , DMTH8012LPSW , ZXMP10A13FQ , ZXMS6005DGQ-13 , 19N20 , DMG10N60SCT , DMG3N60SJ3 , DMG4N60SCT .

History: 2SK2445 | GP1T080A120B

 

 
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