DMTH6016LSD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMTH6016LSD
   Código: H6016LD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.6 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 282 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0195 Ohm
   Paquete / Cubierta: SO8

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DMTH6016LSD Datasheet (PDF)

..1. Size:390K diodes
dmth6016lsd.pdf

DMTH6016LSD 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175 Ideal for High Ambient Temperature C ID max Environments BVDSS RDS(ON) max TA = +25C 100% Unclamped Inductive Switching ensures more reliable and 19.5m @ VGS = 10V 7.6A robust end application 60V Low On-Resistance 28m @ VGS

7.1. Size:536K 1
dmth6010lpsq-13.pdf

DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m

7.2. Size:536K diodes
dmth6010lpsq.pdf

7.3. Size:539K diodes
dmth6010lk3.pdf

Green DMTH6010LK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID Max Excellent Qgd x RDS (ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC/DC Converters 8m @ VGS = 10V 70A 60V Small form factor thermally efficient package enables hi

7.4. Size:477K diodes
dmth6010sct.pdf

DMTH6010SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient TemperatureC BVDSS RDS(ON) Max TC = +25C Environments60V 7.2m @ VGS = 10V 100A 100% Unclamped Inductive Switching Ensures More Reliableand Robust End Application Low Input CapacitanceDescription Low Input/Output Lea

7.5. Size:261K inchange semiconductor
dmth6010sct.pdf

isc N-Channel MOSFET Transistor DMTH6010SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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