DMTH6016LSD Todos los transistores

 ..1. Size:390K  diodes
 dmth6016lsd.pdf

DMTH6016LSD 60V 175 C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175 Ideal for High Ambient Temperature C ID max Environments BVDSS RDS(ON) max TA = +25 C 100% Unclamped Inductive Switching ensures more reliable and 19.5m @ VGS = 10V 7.6A robust end application 60V Low On-Resistance 28m @ VGS

 7.1. Size:536K  1
 dmth6010lpsq-13.pdf

 7.2. Size:536K  diodes
 dmth6010lpsq.pdf

 7.3. Size:539K  diodes
 dmth6010lk3.pdf

Green DMTH6010LK3 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID Max Excellent Qgd x RDS (ON) Product (FOM) BVDSS RDS(ON) Max TC = +25 C Advanced Technology for DC/DC Converters 8m @ VGS = 10V 70A 60V Small form factor thermally efficient package enables hi

 7.4. Size:477K  diodes
 dmth6010sct.pdf

DMTH6010SCT 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25 C Environments 60V 7.2m @ VGS = 10V 100A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description Low Input/Output Lea

 7.5. Size:261K  inchange semiconductor
 dmth6010sct.pdf

isc N-Channel MOSFET Transistor DMTH6010SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p