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DMTH6016LSD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMTH6016LSD
   Маркировка: H6016LD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.9 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.6 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 17 nC
   trⓘ - Время нарастания: 5.2 ns
   Cossⓘ - Выходная емкость: 282 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0195 Ohm
   Тип корпуса: SO8

 Аналог (замена) для DMTH6016LSD

 

 

DMTH6016LSD Datasheet (PDF)

 ..1. Size:390K  diodes
 dmth6016lsd.pdf

DMTH6016LSD DMTH6016LSD

DMTH6016LSD 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175 Ideal for High Ambient Temperature C ID max Environments BVDSS RDS(ON) max TA = +25C 100% Unclamped Inductive Switching ensures more reliable and 19.5m @ VGS = 10V 7.6A robust end application 60V Low On-Resistance 28m @ VGS

 7.1. Size:536K  1
 dmth6010lpsq-13.pdf

DMTH6016LSD DMTH6016LSD

DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m

 7.2. Size:536K  diodes
 dmth6010lpsq.pdf

DMTH6016LSD DMTH6016LSD

DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m

 7.3. Size:539K  diodes
 dmth6010lk3.pdf

DMTH6016LSD DMTH6016LSD

Green DMTH6010LK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID Max Excellent Qgd x RDS (ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC/DC Converters 8m @ VGS = 10V 70A 60V Small form factor thermally efficient package enables hi

 7.4. Size:477K  diodes
 dmth6010sct.pdf

DMTH6016LSD DMTH6016LSD

DMTH6010SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient TemperatureC BVDSS RDS(ON) Max TC = +25C Environments60V 7.2m @ VGS = 10V 100A 100% Unclamped Inductive Switching Ensures More Reliableand Robust End Application Low Input CapacitanceDescription Low Input/Output Lea

 7.5. Size:261K  inchange semiconductor
 dmth6010sct.pdf

DMTH6016LSD DMTH6016LSD

isc N-Channel MOSFET Transistor DMTH6010SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

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