All MOSFET. DMTH6016LSD Datasheet

 

DMTH6016LSD MOSFET. Datasheet pdf. Equivalent


   Type Designator: DMTH6016LSD
   Marking Code: H6016LD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 7.6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 282 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: SO8

 DMTH6016LSD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DMTH6016LSD Datasheet (PDF)

 ..1. Size:390K  diodes
 dmth6016lsd.pdf

DMTH6016LSD DMTH6016LSD

DMTH6016LSD 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175 Ideal for High Ambient Temperature C ID max Environments BVDSS RDS(ON) max TA = +25C 100% Unclamped Inductive Switching ensures more reliable and 19.5m @ VGS = 10V 7.6A robust end application 60V Low On-Resistance 28m @ VGS

 7.1. Size:536K  1
 dmth6010lpsq-13.pdf

DMTH6016LSD DMTH6016LSD

DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m

 7.2. Size:536K  diodes
 dmth6010lpsq.pdf

DMTH6016LSD DMTH6016LSD

DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m

 7.3. Size:539K  diodes
 dmth6010lk3.pdf

DMTH6016LSD DMTH6016LSD

Green DMTH6010LK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID Max Excellent Qgd x RDS (ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC/DC Converters 8m @ VGS = 10V 70A 60V Small form factor thermally efficient package enables hi

 7.4. Size:477K  diodes
 dmth6010sct.pdf

DMTH6016LSD DMTH6016LSD

DMTH6010SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient TemperatureC BVDSS RDS(ON) Max TC = +25C Environments60V 7.2m @ VGS = 10V 100A 100% Unclamped Inductive Switching Ensures More Reliableand Robust End Application Low Input CapacitanceDescription Low Input/Output Lea

 7.5. Size:261K  inchange semiconductor
 dmth6010sct.pdf

DMTH6016LSD DMTH6016LSD

isc N-Channel MOSFET Transistor DMTH6010SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: SUN0260F

 

 
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