DMN6017SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMN6017SK3
Código: N6017S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 43 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 55 nC
Tiempo de subida (tr): 5.4 nS
Conductancia de drenaje-sustrato (Cd): 152 pF
Resistencia entre drenaje y fuente RDS(on): 0.018 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET DMN6017SK3
DMN6017SK3 Datasheet (PDF)
dmn6017sk3.pdf
DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 18m @ VGS = 10V 43A 60V Halogen and Antimony Free. Green Device (Note 3) 20m @ VGS = 4.5V 41A Qualified to AEC-Q101 Standards for H
dmn6017sk3.pdf
isc N-Channel MOSFET Transistor DMN6017SK3FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
dmn601wk.pdf
DMN601WKN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-323 Case Material: Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per
dmn6013lfg.pdf
DMN6013LFG60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25C 13m @ VGS = 10V 10.3A density end products 60V 18m @ VGS = 4.5V 8.8A Occupies just 33% of the board area o
dmn601dmk.pdf
DMN601DMKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity:
dmn601vk.pdf
DMN601VKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Termi
dmn601tk.pdf
DMN601TKN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-523 Case Material: Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensiti
dmn601dwk.pdf
DMN601DWKDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity:
dmn601k.pdf
DMN601KN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: RDS(ON) Case: SOT-23 Case Material: Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivi
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