DMN6017SK3 PDF and Equivalents Search

 

DMN6017SK3 Specs and Replacement

Type Designator: DMN6017SK3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.4 nS

Cossⓘ - Output Capacitance: 152 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO252

DMN6017SK3 substitution

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DMN6017SK3 datasheet

 ..1. Size:493K  diodes
dmn6017sk3.pdf pdf_icon

DMN6017SK3

DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 18m @ VGS = 10V 43A 60V Halogen and Antimony Free. Green Device (Note 3) 20m @ VGS = 4.5V 41A Qualified to AEC-Q101 Standards for H... See More ⇒

 ..2. Size:266K  inchange semiconductor
dmn6017sk3.pdf pdf_icon

DMN6017SK3

isc N-Channel MOSFET Transistor DMN6017SK3 FEATURES Drain Current I = 43A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒

 8.1. Size:148K  diodes
dmn601wk.pdf pdf_icon

DMN6017SK3

DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-323 Case Material Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per ... See More ⇒

 8.2. Size:322K  diodes
dmn6013lfg.pdf pdf_icon

DMN6017SK3

DMN6013LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C 13m @ VGS = 10V 10.3A density end products 60V 18m @ VGS = 4.5V 8.8A Occupies just 33% of the board area o... See More ⇒

Detailed specifications: DMJ70H1D3SH3, DMJ70H1D4SV3, DMJ70H1D5SV3, DMJ70H600SH3, DMJ70H601SK3, DMJ70H601SV3, DMJ70H900HJ3, DMN15H310SK3, 60N06, DMN60H3D5SK3, DMN60H4D5SK3, DMN80H2D0SCTI, DMN90H2D2HCTI, DMN90H8D5HCT, DMN90H8D5HCTI, DMN95H2D2HCTI, DMN95H8D5HCTI

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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