DMN90H8D5HCTI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMN90H8D5HCTI Datasheet (PDF)

..1. Size:545K diodes
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NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance IDBV R DSS DS(ON) High BVDSS Rating for Power Application T = +25C C Low Input/Output Leakage 900V 7@VGS = 10V 2.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green

..2. Size:252K inchange semiconductor
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isc N-Channel MOSFET Transistor DMN90H8D5HCTIFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

2.1. Size:602K diodes
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NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BV R Package DSS DS(ON)T = +25C C High BV Rating for Power Application DSSTO220AB Low Input/Output Leakage 900V 7@V = 10V 2.5A GS(Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) H

2.2. Size:261K inchange semiconductor
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isc N-Channel MOSFET Transistor DMN90H8D5HCTFEATURESDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 7.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general