DMN90H8D5HCTI PDF and Equivalents Search

 

DMN90H8D5HCTI Specs and Replacement

Type Designator: DMN90H8D5HCTI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm

Package: TO220F

DMN90H8D5HCTI substitution

- MOSFET ⓘ Cross-Reference Search

 

DMN90H8D5HCTI datasheet

 ..1. Size:545K  diodes
dmn90h8d5hcti.pdf pdf_icon

DMN90H8D5HCTI

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) High BVDSS Rating for Power Application T = +25 C C Low Input/Output Leakage 900V 7 @VGS = 10V 2.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green... See More ⇒

 ..2. Size:252K  inchange semiconductor
dmn90h8d5hcti.pdf pdf_icon

DMN90H8D5HCTI

isc N-Channel MOSFET Transistor DMN90H8D5HCTI FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 2.1. Size:602K  diodes
dmn90h8d5hct.pdf pdf_icon

DMN90H8D5HCTI

NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low Input Capacitance BV R Package DSS DS(ON) T = +25 C C High BV Rating for Power Application DSS TO220AB Low Input/Output Leakage 900V 7 @V = 10V 2.5A GS (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) H... See More ⇒

 2.2. Size:261K  inchange semiconductor
dmn90h8d5hct.pdf pdf_icon

DMN90H8D5HCTI

isc N-Channel MOSFET Transistor DMN90H8D5HCT FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

Detailed specifications: DMJ70H900HJ3, DMN15H310SK3, DMN6017SK3, DMN60H3D5SK3, DMN60H4D5SK3, DMN80H2D0SCTI, DMN90H2D2HCTI, DMN90H8D5HCT, IRF740, DMN95H2D2HCTI, DMN95H8D5HCTI, DMNH10H028SCT, DMNH10H028SK3, DMNH3010LK3, DMNH4005SCT, DMNH4006SK3, DMNH4011SK3

Keywords - DMN90H8D5HCTI MOSFET specs

 DMN90H8D5HCTI cross reference

 DMN90H8D5HCTI equivalent finder

 DMN90H8D5HCTI pdf lookup

 DMN90H8D5HCTI substitution

 DMN90H8D5HCTI replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 

 

↑ Back to Top
.