DMN90H8D5HCTI - аналоги, параметры транзистора

DMN90H8D5HCTI даташит

..1. Size:545K diodes
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NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance I D BV R DSS DS(ON) High BVDSS Rating for Power Application T = +25 C C Low Input/Output Leakage 900V 7 @VGS = 10V 2.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green

..2. Size:252K inchange semiconductor
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isc N-Channel MOSFET Transistor DMN90H8D5HCTI FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

2.1. Size:602K diodes
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NOT RECOMMENDED FOR NEW DESIGN - NO ALTERNATE PART DMN90H8D5HCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Low Input Capacitance BV R Package DSS DS(ON) T = +25 C C High BV Rating for Power Application DSS TO220AB Low Input/Output Leakage 900V 7 @V = 10V 2.5A GS (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) H

2.2. Size:261K inchange semiconductor
dmn90h8d5hct.pdf pdf_icon

isc N-Channel MOSFET Transistor DMN90H8D5HCT FEATURES Drain Current I = 2.5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 7.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general