DMNH10H028SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMNH10H028SK3 Green100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max V(BR)DSS RDS(ON) max Environments TC = +25C 100V 28m @ VGS = 10V 55A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimises Power Losses Descri

isc N-Channel MOSFET Transistor DMNH10H028SK3FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

GreenDMNH10H028SPSQ 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 100V 40A 28m @ VGS = 10V Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed

GreenDMNH10H028SCT 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switching ensures more reliable 100V 28m @ VGS = 10V 60A and robust end application Low Input Capacitance Description Low

isc N-Channel MOSFET Transistor DMNH10H028SCTFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general