DMNH10H028SK3 PDF and Equivalents Search

 

DMNH10H028SK3 Specs and Replacement

Type Designator: DMNH10H028SK3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.8 nS

Cossⓘ - Output Capacitance: 173 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TO252

DMNH10H028SK3 substitution

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DMNH10H028SK3 datasheet

 ..1. Size:559K  diodes
dmnh10h028sk3.pdf pdf_icon

DMNH10H028SK3

DMNH10H028SK3 Green 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID max V(BR)DSS RDS(ON) max Environments TC = +25 C 100V 28m @ VGS = 10V 55A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimises Power Losses Descri... See More ⇒

 ..2. Size:261K  inchange semiconductor
dmnh10h028sk3.pdf pdf_icon

DMNH10H028SK3

isc N-Channel MOSFET Transistor DMNH10H028SK3 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 28m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general ... See More ⇒

 3.1. Size:549K  1
dmnh10h028spsq-13.pdf pdf_icon

DMNH10H028SK3

Green DMNH10H028SPSQ 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25 C High Conversion Efficiency 100V 40A 28m @ VGS = 10V Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed ... See More ⇒

 3.2. Size:396K  diodes
dmnh10h028sct.pdf pdf_icon

DMNH10H028SK3

Green DMNH10H028SCT 100V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175 C Ideal for High Ambient Temperature ID max BVDSS RDS(ON) max Environments TC = +25 C 100% Unclamped Inductive Switching ensures more reliable 100V 28m @ VGS = 10V 60A and robust end application Low Input Capacitance Description Low... See More ⇒

Detailed specifications: DMN60H4D5SK3, DMN80H2D0SCTI, DMN90H2D2HCTI, DMN90H8D5HCT, DMN90H8D5HCTI, DMN95H2D2HCTI, DMN95H8D5HCTI, DMNH10H028SCT, IRF540, DMNH3010LK3, DMNH4005SCT, DMNH4006SK3, DMNH4011SK3, DMNH6008SCT, DMNH6011LK3, DMNH6012LK3, DMNH6021SK3

Keywords - DMNH10H028SK3 MOSFET specs

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