Справочник MOSFET. DMNH10H028SK3

 

DMNH10H028SK3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DMNH10H028SK3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 55 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 5.8 ns
   Cossⓘ - Выходная емкость: 173 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: TO252

 Аналог (замена) для DMNH10H028SK3

 

 

DMNH10H028SK3 Datasheet (PDF)

 ..1. Size:559K  diodes
 dmnh10h028sk3.pdf

DMNH10H028SK3 DMNH10H028SK3

DMNH10H028SK3 Green100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max V(BR)DSS RDS(ON) max Environments TC = +25C 100V 28m @ VGS = 10V 55A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimises Power Losses Descri

 ..2. Size:261K  inchange semiconductor
 dmnh10h028sk3.pdf

DMNH10H028SK3 DMNH10H028SK3

isc N-Channel MOSFET Transistor DMNH10H028SK3FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 3.1. Size:549K  1
 dmnh10h028spsq-13.pdf

DMNH10H028SK3 DMNH10H028SK3

GreenDMNH10H028SPSQ 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Thermally Efficient Package-Cooler Running Applications V(BR)DSS RDS(ON) TC = +25C High Conversion Efficiency 100V 40A 28m @ VGS = 10V Low RDS(ON) Minimizes On State Losses Low Input Capacitance Fast Switching Speed

 3.2. Size:396K  diodes
 dmnh10h028sct.pdf

DMNH10H028SK3 DMNH10H028SK3

GreenDMNH10H028SCT 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID max BVDSS RDS(ON) max Environments TC = +25C 100% Unclamped Inductive Switching ensures more reliable 100V 28m @ VGS = 10V 60A and robust end application Low Input Capacitance Description Low

 3.3. Size:261K  inchange semiconductor
 dmnh10h028sct.pdf

DMNH10H028SK3 DMNH10H028SK3

isc N-Channel MOSFET Transistor DMNH10H028SCTFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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History: ZXMHC10A07T8

 

 
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