DMNH4011SK3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMNH4011SK3
   Código: H4011S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 25.5 nC
   trⓘ - Tiempo de subida: 3.7 nS
   Cossⓘ - Capacitancia de salida: 247 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET DMNH4011SK3

DMNH4011SK3 Datasheet (PDF)

..1. Size:539K diodes
dmnh4011sk3.pdf

DMNH4011SK3 Green40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C ideal for high ambient temperature environments ID BVDSS RDS(ON) Max Low On-Resistance TC = +25C Low Input Capacitance 40V 10m @ VGS = 10V 50A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

..2. Size:265K inchange semiconductor
dmnh4011sk3.pdf

isc N-Channel MOSFET Transistor DMNH4011SK3FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

8.1. Size:527K 1
dmnh4006spsq-13.pdf

DMNH4006SPSQ Green40V N-CHANNEL 175C MOSFET PowerDI Product Summary Features and Benefits ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 40V 110A 7.0m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low

8.2. Size:471K diodes
dmnh4006sk3.pdf

DMNH4006SK3 Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TC = +25C Low Input Capacitance 40V 6m @ VGS = 10V 140A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability De

8.3. Size:572K diodes
dmnh4005sct.pdf

GreenDMNH4005SCT 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Low Input/Output Leakage TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 40V 4.0m @ VGS = 10V 150A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability

8.4. Size:527K diodes
dmnh4006spsq.pdf

8.5. Size:266K inchange semiconductor
dmnh4006sk3.pdf

isc N-Channel MOSFET Transistor DMNH4006SK3FEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

8.6. Size:261K inchange semiconductor
dmnh4005sct.pdf

isc N-Channel MOSFET Transistor DMNH4005SCTFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: