DMNH4011SK3 MOSFET. Datasheet pdf. Equivalent
Type Designator: DMNH4011SK3
Marking Code: H4011S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 25.5 nC
trⓘ - Rise Time: 3.7 nS
Cossⓘ - Output Capacitance: 247 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
DMNH4011SK3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMNH4011SK3 Datasheet (PDF)
dmnh4011sk3.pdf
DMNH4011SK3 Green40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C ideal for high ambient temperature environments ID BVDSS RDS(ON) Max Low On-Resistance TC = +25C Low Input Capacitance 40V 10m @ VGS = 10V 50A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre
dmnh4011sk3.pdf
isc N-Channel MOSFET Transistor DMNH4011SK3FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
dmnh4006spsq-13.pdf
DMNH4006SPSQ Green40V N-CHANNEL 175C MOSFET PowerDI Product Summary Features and Benefits ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 40V 110A 7.0m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low
dmnh4006sk3.pdf
DMNH4006SK3 Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TC = +25C Low Input Capacitance 40V 6m @ VGS = 10V 140A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability De
dmnh4005sct.pdf
GreenDMNH4005SCT 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Low Input/Output Leakage TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 40V 4.0m @ VGS = 10V 150A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
dmnh4006spsq.pdf
DMNH4006SPSQ Green40V N-CHANNEL 175C MOSFET PowerDI Product Summary Features and Benefits ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 40V 110A 7.0m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low
dmnh4006sk3.pdf
isc N-Channel MOSFET Transistor DMNH4006SK3FEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmnh4005sct.pdf
isc N-Channel MOSFET Transistor DMNH4005SCTFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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