DMNH4011SK3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: DMNH4011SK3
Маркировка: H4011S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 25.5 nC
trⓘ - Время нарастания: 3.7 ns
Cossⓘ - Выходная емкость: 247 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: TO252
Аналог (замена) для DMNH4011SK3
DMNH4011SK3 Datasheet (PDF)
dmnh4011sk3.pdf
DMNH4011SK3 Green40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C ideal for high ambient temperature environments ID BVDSS RDS(ON) Max Low On-Resistance TC = +25C Low Input Capacitance 40V 10m @ VGS = 10V 50A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre
dmnh4011sk3.pdf
isc N-Channel MOSFET Transistor DMNH4011SK3FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 10m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
dmnh4006spsq-13.pdf
DMNH4006SPSQ Green40V N-CHANNEL 175C MOSFET PowerDI Product Summary Features and Benefits ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 40V 110A 7.0m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low
dmnh4006sk3.pdf
DMNH4006SK3 Green40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Max Low On-Resistance V(BR)DSS RDS(ON) Max TC = +25C Low Input Capacitance 40V 6m @ VGS = 10V 140A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability De
dmnh4005sct.pdf
GreenDMNH4005SCT 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID BVDSS RDS(ON) Low Input/Output Leakage TC = +25C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 40V 4.0m @ VGS = 10V 150A Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
dmnh4006spsq.pdf
DMNH4006SPSQ Green40V N-CHANNEL 175C MOSFET PowerDI Product Summary Features and Benefits ID Rated to +175C Ideal for High Ambient Temperature BVDSS RDS(ON) Max TC = +25C Environments 40V 110A 7.0m @ VGS = 10V 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low RDS(ON) Minimizes Power Losses Low
dmnh4006sk3.pdf
isc N-Channel MOSFET Transistor DMNH4006SK3FEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmnh4005sct.pdf
isc N-Channel MOSFET Transistor DMNH4005SCTFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: GM3402
History: GM3402
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918