DMTH6010SCT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DMTH6010SCT
Código: H6010S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 125 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 36.3 nC
Tiempo de subida (tr): 10.4 nS
Conductancia de drenaje-sustrato (Cd): 759 pF
Resistencia entre drenaje y fuente RDS(on): 0.0072 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET DMTH6010SCT
DMTH6010SCT Datasheet (PDF)
dmth6010sct.pdf
DMTH6010SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient TemperatureC BVDSS RDS(ON) Max TC = +25C Environments60V 7.2m @ VGS = 10V 100A 100% Unclamped Inductive Switching Ensures More Reliableand Robust End Application Low Input CapacitanceDescription Low Input/Output Lea
dmth6010sct.pdf
isc N-Channel MOSFET Transistor DMTH6010SCTFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
dmth6010lpsq-13.pdf
DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m
dmth6010lpsq.pdf
DMTH6010LPSQ Green60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature ID BVDSS RDS(ON) Environments TC = +25C (Note 10) 100% Unclamped Inductive Switching (UIS) Test in Production 8m @ VGS = 10V 100A Ensures More Reliable and Robust End Application 60V 12m
dmth6010lk3.pdf
Green DMTH6010LK3 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID Max Excellent Qgd x RDS (ON) Product (FOM) BVDSS RDS(ON) Max TC = +25C Advanced Technology for DC/DC Converters 8m @ VGS = 10V 70A 60V Small form factor thermally efficient package enables hi
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