DMTH6010SCT Specs and Replacement
Type Designator: DMTH6010SCT
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10.4 nS
Cossⓘ - Output Capacitance: 759 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO220
DMTH6010SCT substitution
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DMTH6010SCT datasheet
dmth6010sct.pdf
DMTH6010SCT 60V 175 C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Rated to +175 Ideal for High Ambient Temperature C BVDSS RDS(ON) Max TC = +25 C Environments 60V 7.2m @ VGS = 10V 100A 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application Low Input Capacitance Description Low Input/Output Lea... See More ⇒
dmth6010sct.pdf
isc N-Channel MOSFET Transistor DMTH6010SCT FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 7.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p... See More ⇒
Detailed specifications: DMTH10H005LCT, DMTH10H005SCT, DMTH10H010LCT, DMTH10H010SCT, DMTH4005SCT, DMTH6004SCT, DMTH6004SCTB, DMTH6005LCT, 2SK3878, FCD260N65S3, HLP5305, ISCNL256N, ISP80N08S2L, NVD5C648NL, SUK3015, EC4953, EC8812
Keywords - DMTH6010SCT MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: DMTH10H005SCT | DMP4065SQ | DMT6010SCT
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