1H10 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

1H10 datasheet

..1. Size:5466K haolin elec
1h10.pdf pdf_icon

1H10 N-Channel Trench Power MOSFET General Description SOT-89-3L The 1H10 combines advanced trench MOSFET technology with a low resistance package to provid extremely low R . This device is ideal for powe DS(ON) switching application and LED backlighting. Features 1.GATE V =100V; I =10A DS D 2. DRAIN RDS(ON) @VGS= 10V, IDS= 3A, Typ 95m 3. SOURCE RDS(ON) @VGS= 4.5V, IDS=

0.1. Size:288K ruichips
ru1h100r.pdf pdf_icon

RU1H100R N-Channel Advanced Power MOSFET Features Pin Description 100V/75A RDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications High Speed Power Switching Uninterruptible Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Parame

0.2. Size:377K ncepower
nce01h10.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE01H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

0.3. Size:320K ncepower
nce01h10d.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE01H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

Otros transistores... SMF7N65 , SMF8N60 , SMF8N65 , SMT10N60 , SMT12N60 , SMT5N60 , SMT8N60 , 1H05 , 2N7000 , 5N04 , HA20N50 , HA20N60 , HA210N06 , HA25N50 , HA9N90 , HB100N08 , HP100N08 .