1H10 MOSFET Datasheet: N-Ch, 100V, 8A. Full specification with pinout and replacement list

1H10 Specs and Replacement

Type Designator: 1H10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 44 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm

Package: SOT89

1H10 substitution

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1H10 datasheet

..1. Size:5466K haolin elec
1h10.pdf pdf_icon

1H10 N-Channel Trench Power MOSFET General Description SOT-89-3L The 1H10 combines advanced trench MOSFET technology with a low resistance package to provid extremely low R . This device is ideal for powe DS(ON) switching application and LED backlighting. Features 1.GATE V =100V; I =10A DS D 2. DRAIN RDS(ON) @VGS= 10V, IDS= 3A, Typ 95m 3. SOURCE RDS(ON) @VGS= 4.5V, IDS=... See More ⇒

0.1. Size:288K ruichips
ru1h100r.pdf pdf_icon

RU1H100R N-Channel Advanced Power MOSFET Features Pin Description 100V/75A RDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche Rated TO-220 100% avalanche tested Applications High Speed Power Switching Uninterruptible Power Supply N-Channel MOSFET Absolute Maximum Ratings Symbol Parame... See More ⇒

0.2. Size:377K ncepower
nce01h10.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE01H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON) ... See More ⇒

0.3. Size:320K ncepower
nce01h10d.pdf pdf_icon

Pb Free Product http //www.ncepower.com NCE01H10D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON) ... See More ⇒

Detailed specifications: SMF7N65, SMF8N60, SMF8N65, SMT10N60, SMT12N60, SMT5N60, SMT8N60, 1H05, 2N7000, 5N04, HA20N50, HA20N60, HA210N06, HA25N50, HA9N90, HB100N08, HP100N08