1H10 Datasheet and Replacement. Cross Reference Search

1H10 Datasheet (PDF)

..1. Size:5466K haolin elec
1h10.pdf pdf_icon

1H10 N-Channel Trench Power MOSFET General DescriptionSOT-89-3L The 1H10 combines advanced trench MOSFETtechnology with a low resistance package to providextremely low R . This device is ideal for poweDS(ON)switching application and LED backlighting.Features1.GATE V =100V; I =10ADS D2. DRAIN RDS(ON) @VGS= 10V, IDS= 3A, Typ 95m3. SOURCERDS(ON) @VGS= 4.5V, IDS=

0.1. Size:288K ruichips
ru1h100r.pdf pdf_icon

RU1H100RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/75ARDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche testedApplicationsHigh Speed Power SwitchingUninterruptible Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbol Parame

0.2. Size:377K ncepower
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Pb Free Producthttp://www.ncepower.com NCE01H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

0.3. Size:320K ncepower
nce01h10d.pdf pdf_icon

Pb Free Producthttp://www.ncepower.com NCE01H10DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

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