All MOSFET. 1H10 Datasheet

 

1H10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 1H10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 4.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 44 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.135 Ohm
   Package: SOT89

 1H10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

1H10 Datasheet (PDF)

 ..1. Size:5466K  haolin elec
 1h10.pdf

1H10 1H10

1H10 N-Channel Trench Power MOSFET General DescriptionSOT-89-3L The 1H10 combines advanced trench MOSFETtechnology with a low resistance package to providextremely low R . This device is ideal for poweDS(ON)switching application and LED backlighting.Features1.GATE V =100V; I =10ADS D2. DRAIN RDS(ON) @VGS= 10V, IDS= 3A, Typ 95m3. SOURCERDS(ON) @VGS= 4.5V, IDS=

 0.1. Size:288K  ruichips
 ru1h100r.pdf

1H10 1H10

RU1H100RN-Channel Advanced Power MOSFETFeatures Pin Description 100V/75ARDS (ON)=11m (Typ.) @ VGS=10V Ultra Low On-Resistance Extremely high dv/dt capability Fast Switching and Fully Avalanche RatedTO-220 100% avalanche testedApplicationsHigh Speed Power SwitchingUninterruptible Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbol Parame

 0.2. Size:377K  ncepower
 nce01h10.pdf

1H10 1H10

Pb Free Producthttp://www.ncepower.com NCE01H10NCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

 0.3. Size:320K  ncepower
 nce01h10d.pdf

1H10 1H10

Pb Free Producthttp://www.ncepower.com NCE01H10DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE01H10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =100A RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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