SSR1N50 Todos los transistores

 0.1. Size:197K  1
 ssu1n50a ssr1n50a.pdf

 0.2. Size:504K  samsung
 ssr1n50a.pdf

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 4.046 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Char

 9.1. Size:196K  1
 ssu1n60a ssr1n60a.pdf

 9.2. Size:678K  fairchild semi
 ssr1n60b ssr1n60btm ssu1n60b.pdf

November 2001 SSR1N60B / SSU1N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.9 nC) planar, DMOS technology. Low Crss ( typical 3.6 pF) This advanced technology has been especially tailored to

 9.3. Size:104K  samsung
 ssr1n45 ssu1n45.pdf

 9.4. Size:502K  samsung
 ssr1n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 0.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 9.390 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charact