All MOSFET. SSR1N50 Datasheet

 

SSR1N50 Datasheet and Replacement


   Type Designator: SSR1N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21 nC
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: DPAK
 

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SSR1N50 Datasheet (PDF)

 0.1. Size:197K  1
 ssu1n50a ssr1n50a.pdf pdf_icon

SSR1N50

 0.2. Size:504K  samsung
 ssr1n50a.pdf pdf_icon

SSR1N50

Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 5.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 4.046 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Char

 9.1. Size:196K  1
 ssu1n60a ssr1n60a.pdf pdf_icon

SSR1N50

 9.2. Size:678K  fairchild semi
 ssr1n60b ssr1n60btm ssu1n60b.pdf pdf_icon

SSR1N50

November 2001SSR1N60B / SSU1N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 0.9A, 600V, RDS(on) = 12 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.9 nC)planar, DMOS technology. Low Crss ( typical 3.6 pF)This advanced technology has been especially tailored to

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History: IPA80R280P7

Keywords - SSR1N50 MOSFET datasheet

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