HP80N80 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HP80N80 datasheet

..1. Size:2590K haolin elec
hp80n80.pdf pdf_icon

HP80N80 N-Channel Enhancement Mode MOSFET VDS=80V RDS(ON), Vgs@10V,Ids@40A = 6m FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 80 V Gate-Source Voltage VG

9.1. Size:53K philips
php80n06t 1.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor PHP80N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC)1 75 A features very low on-state

9.2. Size:59K philips
php80n06lt 2.pdf pdf_icon

Philips Semiconductors Product specification TrenchMOS transistor PHP80N06LT, PHB80N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 14 m (VGS = 5 V) g Low thermal resistance

9.3. Size:277K feihonltd
fhp80n08a.pdf pdf_icon