All MOSFET. HP80N80 Datasheet

 

HP80N80 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HP80N80
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 80 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220

 HP80N80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HP80N80 Datasheet (PDF)

 ..1. Size:2590K  haolin elec
 hp80n80.pdf

HP80N80 HP80N80

HP80N80 N-Channel Enhancement Mode MOSFET VDS=80V RDS(ON), Vgs@10V,Ids@40A = 6m FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 80 V Gate-Source Voltage VG

 9.1. Size:53K  philips
 php80n06t 1.pdf

HP80N80 HP80N80

Philips Semiconductors Product specification TrenchMOS transistor PHP80N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC)1 75 Afeatures very low on-state

 9.2. Size:59K  philips
 php80n06lt 2.pdf

HP80N80 HP80N80

Philips Semiconductors Product specification TrenchMOS transistor PHP80N06LT, PHB80N06LT Logic level FETFEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 Vd Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 14 m (VGS = 5 V)g Low thermal resistance

 9.3. Size:277K  feihonltd
 fhp80n08a.pdf

HP80N80 HP80N80

 9.4. Size:259K  feihonltd
 fhp80n07a.pdf

HP80N80 HP80N80

 9.5. Size:857K  feihonltd
 fhp80n07b.pdf

HP80N80 HP80N80

N N-CHANNEL MOSFET FHP80N07B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 63 V Crss ( 180pF) Low Crss (typical 180pF ) Rdson-typ @Vgs=10V 6.3m Fast switching Qg-typ 57nC 100% 100% avalanche tested dv/dt Improved d

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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