HP80N80 Datasheet PDF and Equivalents Search

 ..1. Size:2590K  haolin elec
 hp80n80.pdf

HP80N80 N-Channel Enhancement Mode MOSFET VDS=80V RDS(ON), Vgs@10V,Ids@40A = 6m FEATURES Minimize input capacitance and gate charge Specially designed for DC/DC converters and DC motor control PIN CONFIGURATION (TO-220) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 80 V Gate-Source Voltage VG... See More ⇒

 9.1. Size:53K  philips
 php80n06t 1.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP80N06T Standard level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V trench technology. The device ID Drain current (DC)1 75 A features very low on-state ... See More ⇒

 9.2. Size:59K  philips
 php80n06lt 2.pdf

Philips Semiconductors Product specification TrenchMOS transistor PHP80N06LT, PHB80N06LT Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology VDSS = 55 V d Very low on-state resistance Fast switching ID = 75 A Stable off-state characteristics High thermal cycling performance RDS(ON) 14 m (VGS = 5 V) g Low thermal resistance ... See More ⇒

 9.3. Size:277K  feihonltd
 fhp80n08a.pdf

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 9.4. Size:259K  feihonltd
 fhp80n07a.pdf

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 9.5. Size:857K  feihonltd
 fhp80n07b.pdf

N N-CHANNEL MOSFET FHP80N07B MAIN CHARACTERISTICS FEATURES ID 80 A Low gate charge VDSS 63 V Crss ( 180pF) Low Crss (typical 180pF ) Rdson-typ @Vgs=10V 6.3m Fast switching Qg-typ 57nC 100% 100% avalanche tested dv/dt Improved d... See More ⇒