HY3208AP Todos los transistores

 

HY3208AP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY3208AP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 97 nC
   trⓘ - Tiempo de subida: 39 nS
   Cossⓘ - Capacitancia de salida: 539 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

HY3208AP Datasheet (PDF)

 ..1. Size:1032K  hymexa
 hy3208ap hy3208am hy3208ab hy3208aps hy3208apm.pdf pdf_icon

HY3208AP

HY3208AP/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin Descriptioneatures F 80V/120ARDS(ON)= 5.5 m(typ.) @ VGS=10VSDGSD 100% avalanche tested GSDG Reliable and RuggedTO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGTO-3PS-3L TO-3PM-3SApplications Power Management for Inverter

 8.1. Size:739K  hymexa
 hy3208.pdf pdf_icon

HY3208AP

HY3208P/M/B/PS/PMAbsolute Maximum RatingsSymbol Parameter Rating Unit Common Ratings (TC=25C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range 55 to 175 C -IS Diode Continuous Forward Current TC=25C 120 A Mounted on Large Heat Sink IDM Pulsed Drain Current * T

 9.1. Size:1133K  1
 hy3203c2.pdf pdf_icon

HY3208AP

HY3203C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/120AD D D D D D D DRDS(ON)= 1.9m(typ.) @VGS = 10VRDS(ON)= 2.5m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

 9.2. Size:1133K  hymexa
 hy3203c2.pdf pdf_icon

HY3208AP

HY3203C2Single N-Channel Enhancement Mode MOSFETFeature Description Pin Description 30V/120AD D D D D D D DRDS(ON)= 1.9m(typ.) @VGS = 10VRDS(ON)= 2.5m(typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and RuggedS S S G G S S S Halogen- Free Devices AvailablePin1 PPAK5*6-8L Applications Switching Application Power Management for DC/DCN-Channel MOSFET

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: PK600BA | MTEE2N20FP | 4N70KG-TF2-T | HGI290N10SL | HY1607U | IXTY1N100P | MCH3475

 

 
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