HY3208AP MOSFET Datasheet: N-Ch, 80V, 120A. Full specification with pinout and replacement list

HY3208AP Specs and Replacement

Type Designator: HY3208AP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 227 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 539 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: TO220

HY3208AP substitution

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HY3208AP datasheet

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HY3208AP/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description eatures F 80V/120A RDS(ON)= 5.5 m (typ.) @ VGS=10V S D G S D 100% avalanche tested G S D G Reliable and Rugged TO-220FB-3L TO-220FB-3S TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G TO-3PS-3L TO-3PM-3S Applications Power Management for Inverter... See More ⇒

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HY3208P/M/B/PS/PM Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage 25 TJ Maximum Junction Temperature 175 C TSTG Storage Temperature Range 55 to 175 C - IS Diode Continuous Forward Current TC=25 C 120 A Mounted on Large Heat Sink IDM Pulsed Drain Current * T... See More ⇒

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