HY4004B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY4004B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 217 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 208 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 1465 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de HY4004B MOSFET
HY4004B Datasheet (PDF)
hy4004p hy4004b.pdf
HY4004P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/208ARDS(ON)= 2.5 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedSGD Lead Free and Green Devices Available(RoHS Compliant)GDSTO-220FB-3L TO-263-2L Applications Switching application Power Management for DC/DCN-Channel MOSFETOrdering and Marking Informatio
hy4008.pdf
HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor
hy4008p hy4008m hy4008b hy4008ps hy4008pm.pdf
HY4008P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin Descriptioneatures F80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10VS D S100% avalanche testedD GG SD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-
hy4008w hy4008a.pdf
HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor
Otros transistores... HY3712B , HY3712PS , HY3712PM , HY3906W , HY3906A , HY3912W , HY3912A , HY4004P , IRF1404 , HY4008B6 , HY4008P , HY4008M , HY4008B , HY4008PS , HY4008PM , HY4306B6 , HY4306P .
History: HY4008B6 | STU448S | HY4008P | RU55L18L | HY3906A | HY3912A
History: HY4008B6 | STU448S | HY4008P | RU55L18L | HY3906A | HY3912A
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