HY4004B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HY4004B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 217 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 208 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 1465 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de MOSFET HY4004B
HY4004B Datasheet (PDF)
hy4004p hy4004b.pdf
HY4004P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/208ARDS(ON)= 2.5 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedSGD Lead Free and Green Devices Available(RoHS Compliant)GDSTO-220FB-3L TO-263-2L Applications Switching application Power Management for DC/DCN-Channel MOSFETOrdering and Marking Informatio
hy4008.pdf
HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor
hy4008p hy4008m hy4008b hy4008ps hy4008pm.pdf
HY4008P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin Descriptioneatures F80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10VS D S100% avalanche testedD GG SD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-
hy4008w hy4008a.pdf
HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor
hy4008b6.pdf
HY4008B6N-Channel Enhancement Mode MOSFET Feature Description Pin Description 80V/255ARDS(ON)= 2.6m(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Pin7 Lead Free and Green Devices Available (RoHS Compliant) Pin1 TO-263-6L Pin4 Applications Pin1 Switch application Brushless Motor Drive Pin2,3,5,6,7 N-Channel MOSFET Ordering and Marking Info
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918