HY4004B Todos los transistores

 

HY4004B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HY4004B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 217 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 208 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 1465 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0032 Ohm
   Paquete / Cubierta: TO263
 

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HY4004B Datasheet (PDF)

 ..1. Size:952K  hymexa
hy4004p hy4004b.pdf pdf_icon

HY4004B

HY4004P/BN-Channel Enhancement Mode MOSFETFeatures Pin Description 40V/208ARDS(ON)= 2.5 m(typ.) @ VGS=10V 100% avalanche tested Reliable and RuggedSGD Lead Free and Green Devices Available(RoHS Compliant)GDSTO-220FB-3L TO-263-2L Applications Switching application Power Management for DC/DCN-Channel MOSFETOrdering and Marking Informatio

 9.1. Size:3615K  hymexa
hy4008.pdf pdf_icon

HY4004B

HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor

 9.2. Size:4866K  hymexa
hy4008p hy4008m hy4008b hy4008ps hy4008pm.pdf pdf_icon

HY4004B

HY4008P/M/B/PS/PMN-Channel Enhancement Mode MOSFETPin Descriptioneatures F80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10VS D S100% avalanche testedD GG SD Reliable and RuggedG TO-220FB-3L TO-220FB-3MTO-220FB-3L TO-220FB-3MTO-263-2LTO-263-2L Lead Free and Green Devices Available(RoHS Compliant)SDGSDGpplicationsATO-3PS-3L TO-3PS-3MTO-3PS-

 9.3. Size:3615K  hymexa
hy4008w hy4008a.pdf pdf_icon

HY4004B

HY4008W/AN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/200ARDS(ON)= 2.9 m (typ.) @ VGS=10V100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available(RoHS Compliant)SSDDGGTO-247-3L TO-3P-3LApplicationsD Switching application Power Management for Inverter Systems.G N-Channel MOSFETSOrdering and Marking Infor

Otros transistores... HY3712B , HY3712PS , HY3712PM , HY3906W , HY3906A , HY3912W , HY3912A , HY4004P , IRF1404 , HY4008B6 , HY4008P , HY4008M , HY4008B , HY4008PS , HY4008PM , HY4306B6 , HY4306P .

History: AON6426 | IPD06N03LBG | NTHL160N120SC1 | AON6458 | HY1804P | SI4810BDY | AON6572

 

 
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