HY4004B MOSFET Datasheet: N-Ch, 40V, 208A. Full specification with pinout and replacement list

HY4004B Specs and Replacement

Type Designator: HY4004B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 217 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 208 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 1465 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO263

HY4004B substitution

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HY4004B datasheet

..1. Size:952K hymexa
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HY4004P/B N-Channel Enhancement Mode MOSFET Features Pin Description 40V/208A RDS(ON)= 2.5 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S GD Lead Free and Green Devices Available (RoHS Compliant) GDS TO-220FB-3L TO-263-2L Applications Switching application Power Management for DC/DC N-Channel MOSFET Ordering and Marking Informatio... See More ⇒

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HY4008W/A N-Channel Enhancement Mode MOSFET Features Pin Description 80V/200A RDS(ON)= 2.9 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) S S D D G G TO-247-3L TO-3P-3L Applications D Switching application Power Management for Inverter Systems. G N-Channel MOSFET S Ordering and Marking Infor... See More ⇒

9.2. Size:4866K hymexa
hy4008p hy4008m hy4008b hy4008ps hy4008pm.pdf pdf_icon

HY4008P/M/B/PS/PM N-Channel Enhancement Mode MOSFET Pin Description eatures F 80V/200A RDS(ON)= 2.9 m (typ.) @ VGS=10V S D S 100% avalanche tested D G G S D Reliable and Rugged G TO-220FB-3L TO-220FB-3M TO-220FB-3L TO-220FB-3M TO-263-2L TO-263-2L Lead Free and Green Devices Available (RoHS Compliant) S D G S D G pplications A TO-3PS-3L TO-3PS-3M TO-3PS-... See More ⇒

9.3. Size:3615K hymexa
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