HYG018N10NS1B6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HYG018N10NS1B6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 322 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 5450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
   Paquete / Cubierta: TO263-6L

Búsqueda de reemplazo de MOSFET HYG018N10NS1B6

HYG018N10NS1B6 Datasheet (PDF)

..1. Size:714K hymexa
hyg018n10ns1b6.pdf

HYG018N10NS1B6 N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/322A RDS(ON)=1.4m(typ.)@VGS=10V 100% Avalanche Tested Pin 7 Reliable and Rugged Halogen-Free and Green Devices Available Pin 1 Pin1(RoHS Compliant) TO-263-6L TO-263-6L Applications Energy Storage Pin 1 Battery Protection Battery Operated Tools Pin 2

9.1. Size:625K 1
hyg017n04ls1c2.pdf

HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

9.2. Size:638K 1
hyg015n04ls1c2.pdf

HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

9.3. Size:706K 1
hyg013n03ls1c2.pdf

HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/150A D D D D D D D D RDS(ON)= 1.3m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

9.4. Size:1326K 1
hyg019n04nr1c2.pdf

HYG019N04NR1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/127AD D D DD D D DRDS(ON)= 2.0 m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Battery ProtectionSingle N-Channel MOSFETOrdering and Marking InformationPackage Code

9.5. Size:775K 1
hyg011n04ls1c2.pdf

HYG011N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/165A D D D D D D D D RDS(ON)= 1.1m (typ.) @VGS = 10V RDS(ON)= 1.5m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: