Справочник MOSFET. HYG018N10NS1B6

 

HYG018N10NS1B6 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HYG018N10NS1B6
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 375 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 322 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 110 ns
   Cossⓘ - Выходная емкость: 5450 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm
   Тип корпуса: TO263-6L

 Аналог (замена) для HYG018N10NS1B6

 

 

HYG018N10NS1B6 Datasheet (PDF)

 ..1. Size:714K  hymexa
 hyg018n10ns1b6.pdf

HYG018N10NS1B6 HYG018N10NS1B6

HYG018N10NS1B6 N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/322A RDS(ON)=1.4m(typ.)@VGS=10V 100% Avalanche Tested Pin 7 Reliable and Rugged Halogen-Free and Green Devices Available Pin 1 Pin1(RoHS Compliant) TO-263-6L TO-263-6L Applications Energy Storage Pin 1 Battery Protection Battery Operated Tools Pin 2

 9.1. Size:625K  1
 hyg017n04ls1c2.pdf

HYG018N10NS1B6 HYG018N10NS1B6

HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.2. Size:638K  1
 hyg015n04ls1c2.pdf

HYG018N10NS1B6 HYG018N10NS1B6

HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.3. Size:706K  1
 hyg013n03ls1c2.pdf

HYG018N10NS1B6 HYG018N10NS1B6

HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/150A D D D D D D D D RDS(ON)= 1.3m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.4. Size:1326K  1
 hyg019n04nr1c2.pdf

HYG018N10NS1B6 HYG018N10NS1B6

HYG019N04NR1C2Single N-Channel Enhancement Mode MOSFETFeature Pin Description 40V/127AD D D DD D D DRDS(ON)= 2.0 m(typ.) @VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices AvailableG S S SS S S GPDFN8L(5x6)Applications Load Switch Battery ProtectionSingle N-Channel MOSFETOrdering and Marking InformationPackage Code

 9.5. Size:775K  1
 hyg011n04ls1c2.pdf

HYG018N10NS1B6 HYG018N10NS1B6

HYG011N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/165A D D D D D D D D RDS(ON)= 1.1m (typ.) @VGS = 10V RDS(ON)= 1.5m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

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