All MOSFET. HYG018N10NS1B6 Datasheet

 

HYG018N10NS1B6 Datasheet and Replacement


   Type Designator: HYG018N10NS1B6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 322 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 5450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: TO263-6L
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HYG018N10NS1B6 Datasheet (PDF)

 ..1. Size:714K  hymexa
 hyg018n10ns1b6.pdf pdf_icon

HYG018N10NS1B6

HYG018N10NS1B6 N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/322A RDS(ON)=1.4m(typ.)@VGS=10V 100% Avalanche Tested Pin 7 Reliable and Rugged Halogen-Free and Green Devices Available Pin 1 Pin1(RoHS Compliant) TO-263-6L TO-263-6L Applications Energy Storage Pin 1 Battery Protection Battery Operated Tools Pin 2

 9.1. Size:625K  1
 hyg017n04ls1c2.pdf pdf_icon

HYG018N10NS1B6

HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.2. Size:638K  1
 hyg015n04ls1c2.pdf pdf_icon

HYG018N10NS1B6

HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

 9.3. Size:706K  1
 hyg013n03ls1c2.pdf pdf_icon

HYG018N10NS1B6

HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/150A D D D D D D D D RDS(ON)= 1.3m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme

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History: WMM11N80M3 | FDMS9620S

Keywords - HYG018N10NS1B6 MOSFET datasheet

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