HYG018N10NS1B6 Datasheet. Specs and Replacement

Type Designator: HYG018N10NS1B6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 322 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 nS

Cossⓘ - Output Capacitance: 5450 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: TO263-6L

HYG018N10NS1B6 substitution

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HYG018N10NS1B6 datasheet

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HYG018N10NS1B6

HYG018N10NS1B6 N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/322A RDS(ON)=1.4m (typ.)@VGS=10V 100% Avalanche Tested Pin 7 Reliable and Rugged Halogen-Free and Green Devices Available Pin 1 Pin1 (RoHS Compliant) TO-263-6L TO-263-6L Applications Energy Storage Pin 1 Battery Protection Battery Operated Tools Pin 2... See More ⇒

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 hyg017n04ls1c2.pdf pdf_icon

HYG018N10NS1B6

HYG017N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/135A D D D D D D D D RDS(ON)= 1.7m (typ.) @VGS = 10V RDS(ON)= 2.3m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme... See More ⇒

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HYG018N10NS1B6

HYG015N04LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 40V/150A D D D D D D D D RDS(ON)= 1.4m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme... See More ⇒

 9.3. Size:706K  1
 hyg013n03ls1c2.pdf pdf_icon

HYG018N10NS1B6

HYG013N03LS1C2 Single N-Channel Enhancement Mode MOSFET Feature Description Pin Description 30V/150A D D D D D D D D RDS(ON)= 1.3m (typ.) @VGS = 10V RDS(ON)= 2.0m (typ.) @VGS = 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Power Manageme... See More ⇒

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Detailed specifications: HY5110W, HY5110A, HY5204W, HY5204A, HY5208W, HY5208A, HY5608W, HY5608A, K3569, HYG020N04NA1P, HYG020N04NA1B, HYG020N04NA1PL, HYG023N03LR1D, HYG023N03LR1U, HYG023N03LR1V, HYG025N06LS1C2, HYG025N06LS1P

Keywords - HYG018N10NS1B6 MOSFET specs

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