HSBA0048 Todos los transistores

 

HSBA0048 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA0048
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 108 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 48 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 605 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: PRPAK5X6

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HSBA0048 Datasheet (PDF)

 ..1. Size:536K  1
hsba0048.pdf

HSBA0048
HSBA0048

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DSch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYPgate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 78 A DPRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

 ..2. Size:755K  huashuo
hsba0048.pdf

HSBA0048
HSBA0048

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DSch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYPgate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 48 A DPRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

 9.1. Size:1090K  1
hsba060n10.pdf

HSBA0048
HSBA0048

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 9.2. Size:819K  1
hsba0139.pdf

HSBA0048
HSBA0048

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 9.3. Size:1090K  huashuo
hsba060n10.pdf

HSBA0048
HSBA0048

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 9.4. Size:819K  huashuo
hsba0139.pdf

HSBA0048
HSBA0048

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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History: HSBA6115

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