HSBA0048 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HSBA0048

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 108 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 605 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: PRPAK5X6

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HSBA0048 datasheet

 ..1. Size:536K  1
 hsba0048.pdf pdf_icon

HSBA0048

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DS ch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYP gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 78 A D PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

 ..2. Size:755K  huashuo
 hsba0048.pdf pdf_icon

HSBA0048

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DS ch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYP gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 48 A D PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

 9.1. Size:1090K  1
 hsba060n10.pdf pdf_icon

HSBA0048

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 9.2. Size:819K  1
 hsba0139.pdf pdf_icon

HSBA0048

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

MOSTRAR MÁS

Otros transistores... HYG400P10LR1V, HYG800P10LR1D, HYG800P10LR1U, HYG800P10LR1V, HSD4N65, HSU4N65, HSP4N65, HSF4N65, EMB04N03H, HSBA0139, HSBA060N10, HSBA100P03, HSBA15810C, HSBA20N15S, HSBA3004, HSBA3014, HSBA3031