HSBA0048 - параметры транзистора MOSFET, его аналоги, datasheet

HSBA0048 Datasheet (PDF)

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HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DSch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYPgate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 78 A DPRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

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hsba0048.pdf pdf_icon

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DSch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYPgate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 48 A DPRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

9.1. Size:1090K 1
hsba060n10.pdf pdf_icon

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

9.2. Size:819K 1
hsba0139.pdf pdf_icon

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.