HSBA0048 Datasheet. Specs and Replacement

Type Designator: HSBA0048

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 605 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: PRPAK5X6

HSBA0048 substitution

- MOSFET ⓘ Cross-Reference Search

 

HSBA0048 datasheet

 ..1. Size:536K  1
hsba0048.pdf pdf_icon

HSBA0048

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DS ch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYP gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 78 A D PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate ... See More ⇒

 ..2. Size:755K  huashuo
hsba0048.pdf pdf_icon

HSBA0048

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DS ch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYP gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 48 A D PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate ... See More ⇒

 9.1. Size:1090K  1
hsba060n10.pdf pdf_icon

HSBA0048

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg... See More ⇒

 9.2. Size:819K  1
hsba0139.pdf pdf_icon

HSBA0048

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.... See More ⇒

Detailed specifications: HYG400P10LR1V, HYG800P10LR1D, HYG800P10LR1U, HYG800P10LR1V, HSD4N65, HSU4N65, HSP4N65, HSF4N65, EMB04N03H, HSBA0139, HSBA060N10, HSBA100P03, HSBA15810C, HSBA20N15S, HSBA3004, HSBA3014, HSBA3031

Keywords - HSBA0048 MOSFET specs

 HSBA0048 cross reference

 HSBA0048 equivalent finder

 HSBA0048 pdf lookup

 HSBA0048 substitution

 HSBA0048 replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.