HSBA060N10 Datasheet. Equivalente

 ..1. Size:1090K  1
 hsba060n10.pdf

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 ..2. Size:1090K  huashuo
 hsba060n10.pdf

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 9.1. Size:536K  1
 hsba0048.pdf

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DS ch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYP gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 78 A D PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

 9.2. Size:819K  1
 hsba0139.pdf

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

 9.3. Size:755K  huashuo
 hsba0048.pdf

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DS ch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYP gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 48 A D PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

 9.4. Size:819K  huashuo
 hsba0139.pdf

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.