All MOSFET. HSBA060N10 Datasheet

 

HSBA060N10 Datasheet and Replacement


   Type Designator: HSBA060N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 86 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 539 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PRPAK5X6
 

 HSBA060N10 substitution

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HSBA060N10 Datasheet (PDF)

 ..1. Size:1090K  1
hsba060n10.pdf pdf_icon

HSBA060N10

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 ..2. Size:1090K  huashuo
hsba060n10.pdf pdf_icon

HSBA060N10

HSBA060N10 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA060N10 is the high cell density trenched VDS 100 V N-ch MOSFETs, which provide excellent RDSON RDS(ON),TYP 4.6 m and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. ID 86 A PRPAK5X6 Pin Configuration 100% EAS Guaranteed Low RDS(ON) Low Gate Charg

 9.1. Size:536K  1
hsba0048.pdf pdf_icon

HSBA060N10

HSBA0048 N-Ch 100V Fast Switching MOSFETs Product Summary Description The HSBA0048 is the high cell density trenched N- V 100 V DSch MOSFETs, which provide excellent RDSON and R 6.6 m DS(ON),TYPgate charge for most of the Synchronous Rectification for AC/DC Quick Charger. I 78 A DPRPAK5X6 Pin Configuration 100% EAS Guaranteed Low R DS(ON) Low Gate

 9.2. Size:819K  1
hsba0139.pdf pdf_icon

HSBA060N10

HSBA0139 P-Ch 100V Fast Switching MOSFETs Description Product Summary The HSBA0139 uses advanced trench MOSFET VDS -100 V technology to provide excellent RDS(ON) and gate RDS(ON),typ 42 m charge for use in a wide variety of other applications. ID -30 A The HSBA0139 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

Datasheet: HYG800P10LR1U , HYG800P10LR1V , HSD4N65 , HSU4N65 , HSP4N65 , HSF4N65 , HSBA0048 , HSBA0139 , 2N7002 , HSBA100P03 , HSBA15810C , HSBA20N15S , HSBA3004 , HSBA3014 , HSBA3031 , HSBA3048 , HSBA3050 .

History: MTB20N03AQ8 | NCE20P85GU | SI7113DN | SRT20N090HS2 | RD06HHF1 | STB24NM60N | SI5936DU

Keywords - HSBA060N10 MOSFET datasheet

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