HSBA100P03 Todos los transistores

 

HSBA100P03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HSBA100P03
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 140 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 980 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: PRPAK5X6
     - Selección de transistores por parámetros

 

HSBA100P03 Datasheet (PDF)

 ..1. Size:646K  1
 hsba100p03.pdf pdf_icon

HSBA100P03

HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func

 ..2. Size:646K  huashuo
 hsba100p03.pdf pdf_icon

HSBA100P03

HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func

 9.1. Size:831K  1
 hsba15810c.pdf pdf_icon

HSBA100P03

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica

 9.2. Size:831K  huashuo
 hsba15810c.pdf pdf_icon

HSBA100P03

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2635 | NCEAP40T17AD | WSD2012DN25 | STK28N3LLH5 | IRF7103PBF | IPD12CN10NG | NVMFS020N06C

 

 
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