All MOSFET. HSBA100P03 Datasheet

 

HSBA100P03 Datasheet and Replacement


   Type Designator: HSBA100P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: PRPAK5X6
 

 HSBA100P03 substitution

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HSBA100P03 Datasheet (PDF)

 ..1. Size:646K  1
 hsba100p03.pdf pdf_icon

HSBA100P03

HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func

 ..2. Size:646K  huashuo
 hsba100p03.pdf pdf_icon

HSBA100P03

HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func

 9.1. Size:831K  1
 hsba15810c.pdf pdf_icon

HSBA100P03

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica

 9.2. Size:831K  huashuo
 hsba15810c.pdf pdf_icon

HSBA100P03

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica

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Datasheet: HYG800P10LR1V , HSD4N65 , HSU4N65 , HSP4N65 , HSF4N65 , HSBA0048 , HSBA0139 , HSBA060N10 , HY1906P , HSBA15810C , HSBA20N15S , HSBA3004 , HSBA3014 , HSBA3031 , HSBA3048 , HSBA3050 , HSBA3052 .

History: KIA6N70H-251 | SFP052N80C3 | SWH160R02VT | RU6051H | IPP04N03LBG | WMO90P03TS | STB85NF55T4

Keywords - HSBA100P03 MOSFET datasheet

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