Справочник MOSFET. HSBA100P03

 

HSBA100P03 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: HSBA100P03
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 140 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 60 ns
   Cossⓘ - Выходная емкость: 980 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: PRPAK5X6
 

 Аналог (замена) для HSBA100P03

   - подбор ⓘ MOSFET транзистора по параметрам

 

HSBA100P03 Datasheet (PDF)

 ..1. Size:646K  1
 hsba100p03.pdf pdf_icon

HSBA100P03

HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func

 ..2. Size:646K  huashuo
 hsba100p03.pdf pdf_icon

HSBA100P03

HSBA100P03 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSBA100P03 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON RDS(ON),typ 2.6 m and gate charge for most of the synchronous buck converter applications. ID -100 A The HSBA100P03 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func

 9.1. Size:831K  1
 hsba15810c.pdf pdf_icon

HSBA100P03

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica

 9.2. Size:831K  huashuo
 hsba15810c.pdf pdf_icon

HSBA100P03

HSBA15810C N-Ch 100V Fast Switching MOSFETs Product Summary General Description VDS 100 V 100% EAS Guaranteed Green Device Available RDS(ON),typ 3.7 m Super Low RDS(ON) Advanced high cell density Trench ID 100 A technology PRPAK5*6 Pin Configuration Applications MOTOR Driver. BMS. High frequency switching and synchronous rectifica

ПОКАЗАТЬ ЕЩЁ

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History: ISCNH342P | NCEP040N10GU | MEE7816S-G | DH012N03D | SWF13N65K2 | CS40N20A8 | SWF4N65DA

 

 
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